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MOCVD Growth of Gan on Silicon and Related Surfaces

Published online by Cambridge University Press:  10 February 2011

J. Han ,
J. G. Fleming  and
D. M. Follstaedt
J. Han
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601, jhan@sandia.gov
J. G. Fleming
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601, jhan@sandia.gov
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601, jhan@sandia.gov
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Abstract

The growth of GaN on silicon (Si) substrates by MOCVD is reported in this paper. The use of a high-temperature AIN buffer layer appears to be necessary to establish an initial template morphology for the subsequent growth of GaN. Nucleation modes of GaN on SiO2, (100) Si, and (111) Si are compared; it is shown that the spatial coherency among the nuclei is most preserved when the growth occurred on the hexagonal Si (111) surface. To circumvent the problem associated with cracking due to a thermal expansion mismatch, we also investigate the possibility of using a silicon-on-insulator (SOI) scheme.

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References

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