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MOCVD Growth of GaAs on Si with Low Temperature Preheating Process

Published online by Cambridge University Press:  25 February 2011

N. Takagi ,
T. Eshita ,
S. Miyagaki ,
M. Kimura  and
K. Takasaki
N. Takagi
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
T. Eshita
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
S. Miyagaki
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
M. Kimura
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
K. Takasaki
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
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Abstract

A low temperature preheating process is developed for metalorganic chemical vapor deposition (MOCVD) growth of GaAs on wet chemical pretreated Si substrates. NH4 OH/H2 O2 is found to be most effective in decreasing the preheating temperature among the chemicals we tried: NH4 OH/H2 O2, H2SO4 /H2O2, or hot HNO3. By using NH4OH/H2 O2, the preheating temperature is reduced from 1000°C to 875°C. X-ray diffraction measurements and surface observations with an atomic force microscope (AFM) show that the GaAs film quality obtained with the 875 °C preheating process is better than that obtained with 1000°C preheating.

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References

REFERENCES

1. Kitahara, K., Ohtsuka, N., and Ozeki, M., J. Vac. Sci. Technol. B7, 700(1987).Google Scholar
2. Inoue, T., Eshita, T., and Takasaki, K. in GaAs Heteroepitaxy on 4-inch Si wafer (Proc. of 36th symp. on Semiconductor and Integrated circuit Technology 1989), pp.67–72.Google Scholar
3. Nozawa, K. and Kobayashi, Y., Jpn. J. Appl. Phys. 27, L1736 (1988).Google Scholar
4. Egawa, T., Kobayashi, Y., Hayashi, Y., Soga, T., Jimbo, T., and Umeno, M., Jpn. J. Appl. Phys. 29, L1133 (1990).Google Scholar
5. Eickhoff, T., Morley, S., Zahn, D. R. T., Richter, W., Woolf, O. A., Westwood, D. I., and Williams, R. H. in MBE grown GaAs on Si(100) studied by infrared spectroscopy, edited by Dorson, B. W., Schowalter, L. J., Cunningham, J. E., Pollak, F. H. (Mater. Res. Soc. Symp. proc. Vol.160, 1990) pp. 493–503.Google Scholar
6. Akiyama, M., Kawabata, Y., and Kaminishi, K., J. Cryst. Growth 68, 21 (1984).CrossRefGoogle Scholar