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MOCVD Behaviors of Two-Sized InGaAs Ordered Nano-Bar Arrays Grown Selectively on a GaAs Substrate

Published online by Cambridge University Press:  01 February 2011

Benzhong Wang  and
Soo-Jin Chua
Benzhong Wang
Affiliation:
bz-wang@imre.a-star.edu.sg, Institute of Materials Research and Engineering, OES, 3 Research Link, Singapore, 117602, Singapore
Soo-Jin Chua
Affiliation:
elecsj@nus.edu.sg, Institute of Materials Research and Engineering, OES, Singapore, 117602, Singapore
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Abstract

Nanosphere lithography was used to form a nano-scaled SiO2 template on a GaAs substrate. Especially, a simple method for fabricating nanopatterns with multi feature sizes within one step has been invented. These nanopatterns, as a template, can be used to grow selectively ordered nanostructures arrays such as quantum dots, quantum bars with different feature sizes in one step. Two sized In0.25Ga0.75As nano-bar arrays have been successfully grown on a GaAs substrate by MOCVD.

Keywords

nanostructureIII-Vself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1017 , 2007 , 1017-DD11-12
Copyright
Copyright © Materials Research Society 2007

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