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MOCVD AlGaN/GaN HFET's Material Optimization and Devices Characterization

Published online by Cambridge University Press:  01 February 2011

Alexander Demchuk ,
Don Olson ,
Dan Olson ,
Minseub Shin  and
Gordon Munns
Alexander Demchuk
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Don Olson
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Dan Olson
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Minseub Shin
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Gordon Munns
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
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Abstract

An optimization of growth parameters of Alx Ga1*x N/AlN/GaN heterostructure field effect transistors (HFET) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique on SiC and sapphire substrates with relatively high Al mole fraction in the barrier layer (0.3 < x < 0.5) has been presented. The properties of the two-dimensional electron gas (2DEG) forming at the Alx Ga1-x N/GaN heterojunction can be tuned by careful adjustments of Alx Ga1-x N barrier layer thickness and Al mole fraction, x. The 2DEG sheet conductivities (μ n s ) as high as 2.6 × 1016 V-1s-1 at μ ∼ 2200 cm2/Vs and n s ∼ 1.2 × 1013 cm-2 has been achieved on Alx Ga1-x N/AlN/GaN HFET structures on SiC substrate at x = 0.47. HFET devices processed on these structures exhibited improved low field conductivities and DC and high frequency performance. Saturation currents above 1.2 A/mm at 0 V gate bias, transconductance as high as 340 mS/mm at Lg = 0.25 μm and FT × Lg > 20 GHz × μm were demonstrated on HFET structure grown on SiC substrates.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.39
Copyright
Copyright © Materials Research Society 2004

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References

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