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Midgap Defects in a-SiGe:H Devices from Capacitance Measurements

Published online by Cambridge University Press:  25 February 2011

Steven S. Hegedus  and
Theodore X. Zhou
Steven S. Hegedus
Affiliation:
Institute of Energy Conversion University of Delaware Newark, Delaware 19716
Theodore X. Zhou
Affiliation:
Institute of Energy Conversion University of Delaware Newark, Delaware 19716
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Abstract

We have measured the capacitance of a-SiGe:H p-i-n solar cells as functions of temperature, frequency and bias. The density of states at the Fermi level g(EF) has been determined from two methods. We find that g(EF) increases from 1–2×1016 to 5–10×1017/(cm3eV) as the Ge content increases from 0 to 63%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 533
Copyright
Copyright © Materials Research Society 1989

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References

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