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The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure and temperature

Published online by Cambridge University Press:  01 February 2011

T. Wojtowicz ,
P. Ruterana ,
M. E. Twigg ,
R. L. Henry ,
D. D. Koleske  and
A. E. Wickenden
T. Wojtowicz
Affiliation:
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France
P. Ruterana*
Affiliation:
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France
M. E. Twigg
Affiliation:
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France
R. L. Henry
Affiliation:
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France
D. D. Koleske
Affiliation:
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France
A. E. Wickenden
Affiliation:
SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France
*
* Tel. 33 2 31 45 26 53, Fax. 33 2 31 45 26 60, E-mail: ruterana@ismra.fr
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Abstract

In this work, the evolution of morphology and defect structure in GaN nucleation layers on the a-plane of sapphire are investigated using TEM. The growth temperature and pressure were varied from 560 to 1100°C and from 20 to 600 torr, respectively. Whereas the highest growth temperature leads to a continuous layer, a 2D growth mode is not attained when the chamber pressure is varied from 20 to 600 torr at 1028°C. At the highest pressures (>300 t orr), a large distribution is obtained for the island sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.32
Copyright
Copyright © Materials Research Society 2004

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Footnotes

2

Sandia National Laboratories, Albuquerque, NM 87185

3

Army Research Laboratoy, Adelphi, MD 20783

References

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