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Microstructure and Interfacial Reactions in RuO2/Ta2N Precision Thin Film Resistors

Published online by Cambridge University Press:  21 February 2011

Erming Ma ,
Rick L. Wallace  and
Wayne A. Anderson
Erming Ma
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering Department, Amherst, NY 14260, U.S.A.
Rick L. Wallace
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering Department, Amherst, NY 14260, U.S.A.
Wayne A. Anderson
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering Department, Amherst, NY 14260, U.S.A.
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Abstract

Ruthenium oxide (RuO2) / tantalum nitride (Ta2N) precision thin film resistors were fabricated by dc magnetron reactive sputtering. Proper thermal treatment was utilized to tune the temperature coefficient of resistance (TCR) to near zero. The TCR of these samples could be easily tuned to ±10 ppm/°C. Accelerated life time (ALT) tests at 150 °C for up to 1000 hours demonstrated very good stability both in p□(Δp/p≤0.5%)and TCR (ΔTCR ≤ ±2 ppm/°C). Auger electron spectroscopy (AES) showed that the RuO2 cap layer became deficient in oxygen after annealing, with Ru-Ta-O and Ta2O5 sublayers as the interfacial reaction products. The upper layer of Ta2N was oxidized. Transmission electron microscopy (TEM) revealed that the sample underwent a (re)crystallization. The as-deposited Ta2N was a uniform amorphous phase, and the as-deposited RuO2 possessed fine microcrystals embedded in an amorphous matrix. Crystallization and oxidation occurred in the Ta2N film during annealing, with recrystallization and oxygen redistribution in the RuO2 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 471
Copyright
Copyright © Materials Research Society 1995

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References

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