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Microstructure and Electrical Properties of PbTe Based Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

Anne Dauscher ,
Bertrand Lenoir ,
Alexandre Jacquot ,
Christine Bellouard  and
Maria Dinescu
Anne Dauscher
Affiliation:
Laboratoire de Physique des Matériaux, UMR 7556, Ecole des Mines, Parc de Saurupt, F-54042 Nancy, France
Bertrand Lenoir
Affiliation:
Laboratoire de Physique des Matériaux, UMR 7556, Ecole des Mines, Parc de Saurupt, F-54042 Nancy, France
Alexandre Jacquot
Affiliation:
Laboratoire de Physique des Matériaux, UMR 7556, Ecole des Mines, Parc de Saurupt, F-54042 Nancy, France
Christine Bellouard
Affiliation:
Laboratoire de Physique des Matériaux, UMR 7556, Ecole des Mines, Parc de Saurupt, F-54042 Nancy, France
Maria Dinescu
Affiliation:
NILRP, Laser Department, P.O. Box MG-16, RO-76900 Bucharest, Romania
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Abstract

Lead telluride thin films have been grown on BaF2(111) substrates by pulsed laser deposition from a Nd:YAG laser (λ = 532 nm) at very low temperature (150°C). The chemical composition, the morphology and the crystallographic structure of the layers depend strongly on the deposition conditions. Post-annealing treatments of the films also affect their microstructure. Preliminary electrical properties, conducted in the temperature range of 5 to 350 K, revealed that all the samples were n-type with Hall mobility values greater than 104 cm2/V.s at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G8.3
Copyright
Copyright © Materials Research Society 2002

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References

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