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Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

Published online by Cambridge University Press:  26 February 2011

T. P. Humphreys ,
C. A. Sukow ,
R. J. Nemanich ,
J. B. Posthill ,
R. A. Rudder ,
S. V. Hattangady  and
R. J. Markunas
T. P. Humphreys
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
C. A. Sukow
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709-2194
R. A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709-2194
S. V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709-2194
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709-2194
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Abstract

Epitaxial GaN films have been grown by plasma-enhanced chemical vapor deposition (PECVD). The growth procedure utilizes a He gas discharge combined with the down-stream introduction of trimethylgallium (TMGa) and nitrogen. Both cubic [1111 and wurtzitic [0001] GaN epitaxial films have been achieved on (0001) sapphire substrates. Differences in substrate growth temperatures are believed to account for the different observed phases. A comparative study pertaining to the microstructural, optical and electrical properties of the α-GaN and β-GaN heteroepitaxial films is presented. Also reported for the first time is the Raman spectroscopy data for cubic GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 531
Copyright
Copyright © Materials Research Society 1990

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References

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