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Microscopic Nature of Nature Light Induced Defects

Published online by Cambridge University Press:  10 February 2011

R. Biswas  and
B. C. Pana
R. Biswas
Affiliation:
Department of Physics and Astronomy, Microelectronics Research Center, and Ames Laboratory -USDOE, Iowa State University, Ames, IA 50011
B. C. Pana
Affiliation:
on leave from University of Science and Technology of China, Hefei, P. R., China
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Abstract

Molecular dynamics simulations find light-induced metastable defects to be silicon dangling bonds accompanied by (Si-H)2 defect complexes that have two Si-H bonds. These complexes are formed by pairs of hydrogen breaking a silicon bond. This supports the model of Branz. These defects are the analogue of the H2* defect in c-Si and their energy correlates with the bond-angle strain. Several features of annealing including E-field induced effects are well accounted for by the (Si-H)2 defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 667
Copyright
Copyright © Materials Research Society 1998

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References

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