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Micro-raman spectroscopic investigation of NiSi films formed on BF2+ -, B+ -and nonimplanted (100) Si substrates

Published online by Cambridge University Press:  01 February 2011

S. K. Donthu ,
D. Z. Chi ,
A. S. W. Wong ,
S. J. Chua  and
S. Tripathy
S. K. Donthu
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
D. Z. Chi
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
A. S. W. Wong
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S. J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 Centre of Optoelectronics, Department of Electrical Engineering, National University of Singapore, 2 Engineering Drive, Singapore 119260
S. Tripathy
Affiliation:
Centre of Optoelectronics, Department of Electrical Engineering, National University of Singapore, 2 Engineering Drive, Singapore 119260
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Abstract

Micro-Raman spectroscopic technique was used to investigate vibrational properties of NiSi thin films formed on three different (100) Si substrates: non-implanted, 20-keV BF2+-implanted, and 20-keV B+-implanted. Raman spectroscopy was also performed on NiSi powder to identify various phonon modes associated with different selection rules of group theory. It was found that Raman peaks of NiSi thin films formed on BF2 + implanted substrate were broader and shifted to lower frequency side compared to films formed on other substrates. The broadening of the Raman peaks in these films, which also exhibit much improved thermal stability, is attributed to small grains resulting probably from fluorine segregation to grain boundaries and interface. It is further proposed that besides grain boundary segregation, the excess fluorine in the film influences the stress-state in the silicide film resulting in shift of phonon peak positions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B11.1
Copyright
Copyright © Materials Research Society 2002

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