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Published online by Cambridge University Press: 10 February 2011
Diamond wafer, considered as promising material for electronic substrate, thermal spreader, etc., has been made using deposition technology such as microwave plasma assisted CVD (MPACVD). However, high residual stress of diamond film induces bowing and throughthickness cracking in thick diamond wafer, and so hampers the economic fabrication of the wafer. Thus, to investigate the causes of bowing and cracking, the measurement of residual stress is very important. Of the residual stress, in particular, growth stress is one of the most important research topics because its effect on wafer-related problems is strong though the magnitude is relatively small. Quantification of growth stress is limited because of hightemperature plastic deformation of Si substrate. In this study, the initial growth stress without contribution of plastic deformation of substrate can be predicted through proposed beam bending stress model and numerical calculation in that plastic deformation of Si is considered. Finally, growth stress of film can be calculated from the apparent curvature of substrate measured just after deposition and the plastic curvature after diamond film removal.