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Microcrystalline Si and (Si,Ge) Solar Cells

Published online by Cambridge University Press:  17 March 2011

Vikram L. Dalal ,
Tim Maxson  and
Kay Han
Vikram L. Dalal
Affiliation:
Dept. of Electrical and Computer Engr., Iowa State University, Ames, Iowa 50011
Tim Maxson
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
Kay Han
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
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Abstract

We report on the growth of microcrystalline Si and (Si,Ge) cells on stainless steel substrates. The devices were grown using a remote, low pressure, ECR growth technique at low temperatures (250-350 C). The precursor gases were silane, germane and hydrogen. The devices were of the p-i-n type, with light incident on the p layer. The p layer was a-(Si,C). A novel interface buffer layer, consisting of an amorphous alloy whose bandgap was graded from 1.3 eV to 1.9 eV was used to match the crystalline base layer with the higher gap p layer. It was found that the properties of this buffer layer were critical in determining the properties of the resulting device. The buffer layer was found to increase the voltage by almost 20%. Cells with high fill factors were made using this technique. The quantum efficiency data indicated that the base layers had absorption characteristic of crystalline materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A13.8
Copyright
Copyright © Materials Research Society 2000

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References

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