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Micro Structural Investigation of Porous Silicon Depth Profile by Direct Surface Force Microscopy

Published online by Cambridge University Press:  15 February 2011

D. C. Chang ,
V. Baranauskas ,
I. Doi  and
T. Prohaska
D. C. Chang
Affiliation:
State University of Campinas (Unicamp), Semiconductor Instruments and Photonics Department, Faculty of Electrical Engeneering, Campinas, Brasil.
V. Baranauskas
Affiliation:
State University of Campinas (Unicamp), Semiconductor Instruments and Photonics Department, Faculty of Electrical Engeneering, Campinas, Brasil.
I. Doi
Affiliation:
State University of Campinas (Unicamp), Semiconductor Instruments and Photonics Department, Faculty of Electrical Engeneering, Campinas, Brasil.
T. Prohaska
Affiliation:
Viena University of Technology, Institute of Analytical Chemestry, Vienna, Austria.
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Abstract

We propose a method for studies in deph profile of porous silicon (PS) using atomic force microscopy (AFM) to remove PS layers from the surface. The abrasion were made aplying forces between 10-11 to 10-13 N with the AFM liquid cell measuring method. These range of forces is enough to remove very thin PS layers of the surface at each scan the equipment makes. With this method we can make studies and see the PS diferences in depth profile made by different process or different manufacturing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 173
Copyright
Copyright © Materials Research Society 1996

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