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Metastable Solid Solutions of Impurities in Silicon

Published online by Cambridge University Press:  15 February 2011

J. S. Williams  and
K. T. Short
J. S. Williams
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
K. T. Short
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
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Abstract

High resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 109
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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ll.Williams, J.S. and Short, K.T., submitted to Appl. Phys. Lett.Google Scholar