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Metastable Defects of Iron-Boron Pair in Silicon

Published online by Cambridge University Press:  03 September 2012

H. Nakashima  and
T. Sadoh
H. Nakashima
Affiliation:
Department of Electrical Engineering, Kyushu University, 6–10–1 Uakozaki, Higashi-ku, Fukuoka 812, Japan
T. Sadoh
Affiliation:
Department of Electrical Engineering, Kyushu University, 6–10–1 Uakozaki, Higashi-ku, Fukuoka 812, Japan
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Abstract

We have found configuratlonally metastable Fe-B pairs in Si by using dark or photo capacitance-transient technique combined with minority-carrier injection. The metastable pairs are observed as four electron-trapping levels at Ec-0.43 eV, 0.46 eV, 0.52 eV, and 0.54 eV and as two hole-trapping levels at Ev+0.53 eV and 0.48 eV after the injection at 150 K. The production of each level is investigated under various injection conditions, and the annihilation process is studied by isochronal anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 555
Copyright
Copyright © Materials Research Society 1992

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References

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