Hostname: page-component-7dd5485656-jtdwj Total loading time: 0 Render date: 2025-10-31T18:58:16.561Z Has data issue: false hasContentIssue false
  • English
  • Français

Metastable Defects in Silicon

Published online by Cambridge University Press:  26 February 2011

A. Chantre
A. Chantre*
Affiliation:
CNET, B.P. 98, F-38243 Meylan Cedex, France
Get access

Abstract

Originally discovered in compound semiconductors, metastability is now being observed for many defects in silicon as well. Simple considerations indeed suggest the existence of alternate, metastable configurations for ab large variety of defect complexes, even as simple as ionic pairs. Techniques to isolate these excited defect configurations are also now well established, and being used routinely in a number of laboratories. This paper will review the recent achievements in this field. Selected examples will be described to illustrate the status of research on metastable defects in silicon.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 37
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

Refrences

[1]Watkins, G.D. and Corbett, J. W, Phys. Rev. 134, A1359 (1964)Google Scholar
[2]Benton, J.L. and Levinson, M., in Defects in Semiconductors II, edited by Mahajan, S. and Corbett, J.W. (North Holland, New York, 1983), p. 95Google Scholar
[3]Kimerling, L.C., Solid State Electronics, 21, 1391 (1978)Google Scholar
[4]Kimerling, L.C. and Benton, J.L., Physica 116B, 297 (1983)Google Scholar
[5]Song, L. W, Benson, B.W. and Watkins, G.D., Phys. Rev. B 33, 1452 (1986)Google Scholar
[6]Chantre, A. and Kimerling, L.C., Appl. Phys. Lett. 48;1000 (1986)Google Scholar
[7]Chantre, A. and Bois, D., Phys. Rev. B 31, 7979 (1985)Google Scholar
[8]Van Kooten, J.J., Weller, G.A. and Ammerlaan, C.A.J., Phys. Rev. B 30, 4564 (1984)Google Scholar
[9]Nolte, D.D., Haller, E.E. and Omling, P., in Defects in Semiconductors 1986, edited by Von Bardeleben, H.J., Mat. Sci. Forum Vol.10–12 (1986) p 457Google Scholar
[10]Weber, J., private communicationGoogle Scholar
[11]Chantre, A. and Kimerling, L.C., private communication Ref.9, p 387Google Scholar
[12]Benton, J.L., Asom, M.T. and Kimerling, L.C., unpublished resultsGoogle Scholar
[13]Tkachev, V.D., Makarenko, L.F., Markevitch, V.P. and Murin, L.I., Sov. Phys. Semicond. 18, 324 (1984)Google Scholar
[14]Chantre, A.,Appl. Phys. Lett. 50, 1500 (1987)Google Scholar
[15]Pajot, B., private communicationGoogle Scholar
[16]Chantre, A., unpublished resultsGoogle Scholar
[17]Jellison, G.E. Jr, J. Appl. Phys. 53, 5715 (1982)Google Scholar
[18]Levinson, M.,Appl. Phys. 58, 2628 (1985)Google Scholar
[19]Benson, B.W., Song, L.W., Watkins, G.D. and Dates, A. S., B. Am. Phys. Soc. 32, 403 (1987)Google Scholar
[20]Song, L.W., Benson, B.W. and Watkins, G.D., Appl. Phys. Lett. 51, 1155 (1987)Google Scholar
[21]Asom, M.T., Benton, J.L., Sauer, R. and Kimerling, L.C., Appl. P-hys. Lett. 51, 257 (1987)Google Scholar
[22]Song, L.W. and Watkins, G.D., B. Am. Phys. Soc. 32, 403 (1987)Google Scholar
[23]Chantre, A., Benton, J.L., Asom, M.T. and Kimerling, L.C., B. Am. Phys. Soc. 32, 403 Ref. 9, p 1111Google Scholar
[24]Watkins, G.D., 14th Int. Conf. on Defects in Semiconductors (Paris, Aug. 1986)Google Scholar
[25]Chantre, A., Phys. Rev. B 32, 3687 (1985)Google Scholar
[26]Chantre, A., J. Phys. (Paris) Colloq. 44, C5–269 (1983)Google Scholar
[27]Bains, S.K. and Banbury, P.C., J. Phys. C : Solid State Phys. 18, L109 (1985)Google Scholar
[28]Watkins, G.D., Phys. Rev. B 13, 2511 (1976)Google Scholar
[29]Song, L.W., Benson, B.W. and Watkins, G.D., these ProceedingsGoogle Scholar