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Metastable changes of the electrical conductivity in microcrystalline silicon

Published online by Cambridge University Press:  17 March 2011

N. H. Nickel  and
M. Rakel
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
M. Rakel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

The temperature dependence of the dark conductivity, σD, of as-grown and H depleted µproportional σc-Si was measured. While σD of the H depleted samples did not exhibit any influence of thermal treatment prior to the measurements, in as-grown σproportional µc-Si the dark conductivity increased by 2 orders of magnitude below 300 K upon rapid thermal quenching. The frozen-in state is reversible and an anneal at 440 K followed by a slow cool completely restores the initial state. The time and temperature dependence of the relaxation of the quenched-in state reveals two competing processes. At short times σD increases due to the activation of a donor complex and at long times σD decreases due to the dissociation of bond-center H complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A28.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
[2] Nickel, N. H., Jackson, W. B., and Johnson, N. M., Phys. Rev. Lett. 71, 2733 (1993).10.1103/PhysRevLett.71.2733Google Scholar
[3] Pfleiderer, H., Kusian, W., and Krühler, W., Solid St. Commun. 49, 493 (1984).Google Scholar
[4] Jackson, W. B. and Moyer, M. D., Phys. Rev. B 36, 6217 (1987).10.1103/PhysRevB.36.6217Google Scholar
[5] Street, R. A., Hack, M., and Jackson, W. B., Phys. Rev. B 37, 4209 (1988).Google Scholar
[6] Street, R. A., Kakalios, J., Tsai, C. C., and Hayes, T. M., Phys. Rev. B 35, 1316 (1987).Google Scholar
[7] Dersch, H., Stuke, J., and Beichler, J., Appl. Phys. Lett. 36, 456 (1981).Google Scholar
[8] Nickel, N. H., Johnson, N. M., and Walle, C. G. Van de, Phys. Rev. Lett. 72, 3393 (1994).Google Scholar
[9] Gorelkinskii, Y. V. and Nevinnyi, N. N., Sov. Tech. Phys. Lett. 13, 45 (1987).Google Scholar
[10] Walle, C. G. Van de, Denteneer, P. J. H., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B 39, 10791 (1989).Google Scholar
[11] Meier, J., Flückiger, R., Keppner, H., and Shah, A., Appl. Phys. Lett. 65, 860 (1994).10.1063/1.112183Google Scholar
[12] Tanielian, M., Phil. Mag. B 45, 435 (1982).Google Scholar
[13] Mott, N. F., J. Non-Cryst. Solids 1, 1 (1968).Google Scholar
[14] Walle, C. G. Van de, Denteneer, P. J. H., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B 39, 10791 (1989).Google Scholar
[15] Wieringen, A. Van and Warmoltz, N., Physica (Utrecht) 22, 849 (1956).10.1016/S0031-8914(56)90039-8Google Scholar
[16] Walle, C. G. Van de, Phys. Rev. B 49, 4579 (1994).Google Scholar
[17] Newman, R. C. and Jones, R., in Oxygen in Silicon, edited by Shimura, F. (Academic Press, San Diego, 1994), Vol. 42, p. 289.Google Scholar
[18] Markevich, V. P. and Suezawa, M., J. Appl. Phys. 83, 2988 (1998).Google Scholar