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Metastability Under High-Intensity Light of Device-Quality He-Diluted, H2-Diluted and Standard a-Si:H Films Deposited Between 50°C and 350°C

Published online by Cambridge University Press:  16 February 2011

P. Morin  and
P. Roca i Cabarrocas
P. Morin
Affiliation:
Laboratoire PICM, Ecole Polytechnique, F-91128, Palaiseau, Cedex, France.
P. Roca i Cabarrocas
Affiliation:
Laboratoire PICM, Ecole Polytechnique, F-91128, Palaiseau, Cedex, France.
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Abstract

We report the results of a study of the metastability under illumination by high intensity red light of device quality a-Si:H thin films deposited using a wide range of deposition conditions. The process variables included substrate temperature, pressure, rf power, and dilution of silane by He or H2. In-situ Monitoring of the sample conductivity and defect density during light-soaking provides the kinetics of the degradation of the electronic properties of the films. We observe equilibration of the photoconductivity and of the defect density. The characteristic time of equilibration τse of the defect density varies by more than an order of magnitude, dividing the samples into two groups: one group with a τse on the order of 103 seconds, the other with a τse on the order of 104 seconds. Low steady state defect densities combined with high ημτ products are observed for “standard” a-Si:H deposited between 100°C and 250°C and He-diluted films deposited above 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 281
Copyright
Copyright © Materials Research Society 1994

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References

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