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Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

Published online by Cambridge University Press:  28 February 2011

W. K. Chen ,
J. C. Chen ,
L. Anthony  and
P. L. Liu
W. K. Chen
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buffalo, Amherst, N. Y. 14260
J. C. Chen
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buffalo, Amherst, N. Y. 14260
L. Anthony
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buffalo, Amherst, N. Y. 14260
P. L. Liu
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buffalo, Amherst, N. Y. 14260
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Abstract

We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 423
Copyright
Copyright © Materials Research Society 1990

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References

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