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Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

J. S. Chan ,
T. C. Fu ,
N. W. Cheung ,
N. Newman ,
X. Liu ,
J. T. Ross ,
M. D. Rubin  and
P. Chu
J. S. Chan
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
T. C. Fu
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
N. W. Cheung
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
N. Newman
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
X. Liu
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
J. T. Ross
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
M. D. Rubin
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
P. Chu
Affiliation:
Department of Electrical Engineering & Computer Sciences, UC-Berkeley, CA 94720, Lawrence Berkeley Laboratory, UC-Berkeley, CA 94720, Center for Advanced Materials, Hong Kong City Polytechnic, Hong Kong
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Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10∼2 to 10-6 Ω-cm2) which changed with annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 223
Copyright
Copyright © Materials Research Society 1994

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References

[1] Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B, 10, 1237 (1992).Google Scholar
[2] Rubin, M., Newman, N., Chan, J.S., Fu, T.C. and Ross, J.T., Appl. Phys. Lett., 64, 64 (1994).Google Scholar
[3] Look, D.C., Electrical Characterization of GaAs Materials and Devices, 1st ed. (John Wiley and Sons, New York, 1989), pp. 132–136.Google Scholar
[4] Chem, J.G.J. and Oldham, W.G., IEEE Elect. Dev. Lett., 5, 178 (1984).Google Scholar