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Metallization Issues in Advanced Ceramic Substrates:- Microstructural. Microchemistry and Thermal Conductivity in Aln

Published online by Cambridge University Press:  21 February 2011

Alistair D. Westwood  and
Michael R. Notis
Alistair D. Westwood
Affiliation:
Department of Materials Science and Engineering, Whitaker Lab #5, Lehigh University, Bethlehem, PA 18015
Michael R. Notis
Affiliation:
Department of Materials Science and Engineering, Whitaker Lab #5, Lehigh University, Bethlehem, PA 18015
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Abstract

Microchemical and microstructural study has been carried out on the tungsten-aluminum nitride (W-AlN) thick film metallization interface. A reaction has been found to occur with the formation of precipitates at AlN grain boundaries and also within the AlN grains; a thin crystalline grain boundary film was also observed. The interface morphology and chemistry is compared to the molybdenum/manganese-aluminum nitride (MoMn-AlN) interface. The effects of morphology and microchemical variations upon thermal conductivity are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 154: Symposium K – Electronic Packaging Materials Science IV , 1989 , 479
Copyright
Copyright © Materials Research Society 1989

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References

[1] Werdecker, W. & Aldinger, F., IEEE Trans. Components Hybrids, Manuf. Technol., CHMT–7, 399–404 (1985).Google Scholar
[2] Blogett, A.J., Scientific American, 249, 86–97 (1983).Google Scholar
[3] Kuramoto, N., Taniguchi, H. & Aso, I., IEEE Trans. Components Hybrids, Manuf. Technol., CHMT–9, 386–390 (1986).Google Scholar
[4] Werdecker, W., Proceedings ISHM 1985, Stressa/Italy.Google Scholar
[5] Westwood, A.D. & Notis, M.R., Mat. Res. Soc. Symp. Proc., 108, 331–336 (1988).Google Scholar
[6] Westwood, A.D. & Notis, M.R., to be published in Advances in Ceramics 26. Ceramic Substrates and Packages, edited by Yan, M.F. et al, ACerSoc, Westerville OH (1989).Google Scholar
[7] Swartz, E.T. & Pohl, R.O., Appl. Phys. Lett., 51, 2200–2202 (1987).Google Scholar
[8] Brow, R.K., Loehman, R.E., Tomsia, A.P. & Pask, J.A., to be published in Advances in Ceramics 26, Ceramic Substrates and Packages, edited by Yan, M.F. et al, ACerSoc, Westerville OH (1989).Google Scholar
[9] Beyers, R., Sinclair, R. & Thomas, M.E., J. Vac. Sci. Technol., B2, 781–784 (1984).Google Scholar
[10] Enloe, J.H., Rice, R.W., Lau, J.W. & Kumar, R., to be published in Advances in Ceramics 26, Ceramic Substrates and Packages, edited by Yan, M.F. et al, ACerSoc, Westerville OH (1989).Google Scholar
[11] Waring, J.L., J. Am. Ceram. Soc., 48, 494 (1965).Google Scholar
[12] Kurokawa, Y. & Scott, W.D., presented at the 1988 ACerSoc, 41st Pacific Coast Regional Meeting, San Francisco, CA, 1988 (unpublished).Google Scholar
[13] Berman, R., Thermal Conductivity of Solids, p.73, (Oxford University Press, Oxford, 1976).Google Scholar
[14] Slack, G.A., Tanzilli, R.A., Pohl, R.O. & Vandersande, J.W., J. Phys. Chem. Solids, 48, 641–647 (1987).Google Scholar
[15] Slack, G.A., J. Phys. Chem. Solids, 34, 321–335 (1973).Google Scholar
[16] Westwood, A.D., M. S Thesis, Lehigh University, Oct. 1988.Google Scholar
[17] MacDonald, W.M. & Anderson, A.C., in Thermal Conductivity 17, edited by Hust, J.G. (Plenum Press, New York, 1983), p. 185 Google Scholar