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Melting Evaporation and Recrystallization of A-Sic:H Films by Excimer Laser

Published online by Cambridge University Press:  15 February 2011

S. Wickramanayaka ,
K. Kitamura ,
Y. Nakanishi  and
Y. Hatanaka
S. Wickramanayaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan
K. Kitamura
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan
Y. Nakanishi
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan
Y. Hatanaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan
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Abstract

A study of laser annealing of a-SiC:H films was carried out in order to obtain poly-SiC films. First, a-SiC:H films were fabricated at temperatures ranging from 30 to 400 °C. All these films show amorphous structure before the annealing process. After annealing by a single pulse of 248 nm laser, films show poly-SiC structure. The pulse energies used for these anneals varied from 30 to 300 mJ/pulse. After exposing to a laser pulse, the a-SiC:H films melt and recrystallize forming poly-SiC structure. In addition to this process, a fraction of the film is observed to be vaporized. This vaporized fraction depends on the original film composition, hardness and the laser pulse-energy. Electrical resistivity of the films before the annealing process lies in the region of 1015 Ωcm. This resistivity drops drastically after the annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 429
Copyright
Copyright © Materials Research Society 1996

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References

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