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The Mechanism of Epitaxial Si-Ge/Si Heterostructure Formation by Wet Oxidation of Amorphous Si-Ge Thin Films

Published online by Cambridge University Press:  28 February 2011

S.M. Prokes ,
A.K. Rai  and
W.E. Carlos
S.M. Prokes
Affiliation:
Naval Research Laboratory, Washington, DC 20375
A.K. Rai
Affiliation:
Universal Energy Systems, Inc., Dayton, OH 45432
W.E. Carlos
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Epitaxial SiGe/Si heterostructures have been formed by wet oxidation from amorphous SiGe films deposited on Si(100). Amorphous SixGe1-x films were deposited at a vacuum of 10-7 Torr. The presence of an initial native oxide precluded solid phase epitaxy under standard annealing conditions, but epitaxy could be achieved by the use of wet oxidation. The samples were oxidized at 900°C for various times and examined in reflection electron diffraction, ellipsometry, cross-sectional and plan-view transmission electron diffraction, and electron spin resonance. The formation of the epitaxial layer and oxide has been examined, and an epitaxial growth model is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 341
Copyright
Copyright © Materials Research Society 1990

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