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Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots.

Published online by Cambridge University Press:  01 February 2011

A. M. Mintairov ,
P. A. Blagnov ,
O. V. Kovalenkov ,
C. Li ,
J. L. Merz ,
S. Oktyabrsky ,
V. Tokranov ,
A. S. Vlasov  and
D. A. Vinokurov
A. M. Mintairov
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN 46556, USA
P. A. Blagnov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
O. V. Kovalenkov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
C. Li
Affiliation:
Aerospace and Mechanical Engineering Department, University of Notre Dame, IN 46556, USA
J. L. Merz
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN 46556, USA
S. Oktyabrsky
Affiliation:
UAlbany Inst. for Materials University at Albany-SUNY, 251 Fuller Rd. Albany, NY 12203
V. Tokranov
Affiliation:
UAlbany Inst. for Materials University at Albany-SUNY, 251 Fuller Rd. Albany, NY 12203
A. S. Vlasov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
D. A. Vinokurov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
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Abstract

We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. “Pressure” coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GaInP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tipinduced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an order of magnitude increase of single QD emission intensity with increased pressure.

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References

1. Robinson, H. D., Miller, M. G., Goldberg, B. B. and Merz, J. L., Appl. Phys. Lett. 72, 2081 (1998)Google Scholar
2. Chavez-Pirson, A., Temmyo, J. and Ando, H., Physica E, 7, 367 (2000)Google Scholar
3. Tokranov, V., Yakimov, M., Katsnelson, A., Dovodenko, K., Todt, R., and Oktyabrsky, S., in Progress of Semiconductor Materials for Optoelectronic Applications, MRS 2001 Fall Symposium Proceedings (in press).Google Scholar
4. Mintairov, A. M., Vlasov, A. S., Merz, J. L., Kovalenkov, O. V., Vinokurov, D. A., in Morphological and Compositional Evolution of Heteroepiaxial Semiconductor Thin Films MRS Symposium Proceedings, 618, p. 207–212, 2000,Google Scholar
5. Mintairov, A. M., Blagnov, P. A., Kosel, T., Merz, J. L., Ustinov, V. M., Vlasov, A. S., Cook, R. E., Phys. Rev. Lett., 87, 277401 (2001)Google Scholar
6. Inskevich, I. E., Lyapin, S. G., Troyan, I. A., Klipstein, P. C., Eaves, L., Martin, P. C. and , Henini, Phys.Rev. B, 58, R4250 (1998).Google Scholar