Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-10T07:51:35.086Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Liangjin Wu ,
Shanthi Iyer ,
Kalyan Nunna ,
Jia Li ,
Sudhakar Bharatan ,
Ward Collis  and
Kevin Matney
Liangjin Wu
Affiliation:
Department of Electrical & Computer Engineering, North Carolina A&T State University Greensboro, NC 27411
Shanthi Iyer
Affiliation:
Department of Electrical & Computer Engineering, North Carolina A&T State University Greensboro, NC 27411
Kalyan Nunna
Affiliation:
Department of Electrical & Computer Engineering, North Carolina A&T State University Greensboro, NC 27411
Jia Li
Affiliation:
Department of Electrical & Computer Engineering, North Carolina A&T State University Greensboro, NC 27411
Sudhakar Bharatan
Affiliation:
Department of Electrical & Computer Engineering, North Carolina A&T State University Greensboro, NC 27411
Ward Collis
Affiliation:
Department of Electrical & Computer Engineering, North Carolina A&T State University Greensboro, NC 27411
Kevin Matney
Affiliation:
Bede Scientific Inc, Englewood, CO
Get access

Abstract

In this work, the growth and properties of GaAsSbN single quantum wells are investigated. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy system with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of growth temperature on the optical properties of the layers. For reference low temperature photoluminescence (PL) characteristics of the GaAsSb/GaAs QWs as a function of Sb is also presented. A significant increase in PL intensity with a corresponding blue shift in emission energy and a decrease in full width at half maximum (FWHM) has been observed on annealing the GaAsSbN/GaAs sample in a nitrogen ambient at 700°C. PL emission wavelength as long as 1.52 μm at room temperature has been obtained on annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z1.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Saito, H., Makimoto, T. and Kobayashi, N., J. Cryst. Growth 195, 416(1998).Google Scholar
[2] Friedman, D.J., Geisz, J.F., Kurtz, S.R. and Olson, J.M., J. Cryst.Growth 195, 438(1998).Google Scholar
[3] Ha, W., Gambin, V., Wistey, M., Bank, S., Yuen, H., Kim, S. and Harris, J. S. Jr, Electronic Letters 38, 277, (2002).Google Scholar
[4] Ungaro, G., Le Roux, G., Teissier, R. and Harmand, J.C., Electronics Letters 35, 1246 (1999).Google Scholar
[5] Harmand, J. C., Caliman, A., Rao, E. V. K., Largeau, L., Ramos, J., Tessier, R., Travers, L., Ungaro, G., Theys, B., and Dias, I.F.L., Semicond. Sci. Technol. 17, 778–784 (2002).Google Scholar
[6] Harmand, J.C., Ungaro, G., Ramos, J., Rao, E.V.K., Saint-Girons, G., Teissier, R., Le Roux, G., Largeau, L., and Patriarche, G., J. Cryst. Growth 227–228, 553 (2001).Google Scholar
[7] Jones, E.D., Modine, N.A., Waldrip, K.E., Jalali, F., Klem, J.F., and Peake, G.M., MRS Proc. 744, 637 (2002).Google Scholar
[8] Pan, Z., Li, L.H., Zhang, W., Lin, Y.W., and Wu, R.H., Appl. Phys. Lett., 77(2), 214(2000)Google Scholar