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Material Characterization by Contactless Photoconductivity Measurements

Published online by Cambridge University Press:  25 February 2011

M. Kunst  and
A. Werner
M. Kunst
Affiliation:
Hahn-Meitner-Institut für Kernforschung Berlin GmbH, Bereich Strahlenchemie, Glienicker Str. 100, D-1000 Berlin 39, Federal Republic of Germany
A. Werner
Affiliation:
Hahn-Meitner-Institut für Kernforschung Berlin GmbH, Bereich Strahlenchemie, Glienicker Str. 100, D-1000 Berlin 39, Federal Republic of Germany
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Abstract

Transient photoconductivity measurements with the time-resolved microwave conductivity (TRMC) method have been applied to three different types of semiconductors: hydrogenated amorphous silicon, single crystalline silicon and GaAs/GaAlAs multiple quantum well structures. Analysis of the signals in terms of charge carrier-lattice interaction points to an intimate relation between TRMC signals and intrinsic material properties. It is shown that the TRMC-technique is an excellent tool to characterize photosensitive materials.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 361
Copyright
Copyright © Materials Research Society 1986

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References

[1] Infelta, P.P., de Haas, M.P. and Warman, J.M., Rad. Phys. Chem. 10, 353 (1977)Google Scholar
[2] Kunst, M. and Beck, G., submitted for publicationGoogle Scholar
[3] Kunst, M. and Werner, A., Proc. MRS-Europe Conf., Ed. by Pinard, P. and Kalbitzer, S., Strasbourg, 515 (1984)Google Scholar
[4] Bimberg, D., Christen, J., Steckenborn, A., Weimann, G. and Schlapp, W., Journal of Luminescence 30, 562 (1985)Google Scholar
[5] Werner, A. and Kunst, M., Appl. Phys. Lett. 46, 69 (1985)Google Scholar