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The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Piotr Perlin ,
Christian Kisielowski ,
Laila Mattos ,
Noad A. Shapiro ,
Joachim Kruger ,
Jinwei Yang  and
Eicke R. Weber
Piotr Perlin
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Christian Kisielowski
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Laila Mattos
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Noad A. Shapiro
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Joachim Kruger
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Jinwei Yang
Affiliation:
APA Optics
Eicke R. Weber
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
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Abstract

A photoluminescence from a multiquantum GaN/InxGa1−xN/GaN well structure (x varies between 0.1 to 0.4) was investigated at various temperatures, pumping powers. While the temperature dependence of the peak position indicates normal band to band character of radiative recombination, the large pumping power induced “blue”shift of the peak position (up to 200 meV) can be observed. This kind of shift cannot be easily explained by the band tailing effect but is most likely the result of the screening of the strain-induced piezoelectric field. By evaluating the theoretical values of the piezoelectric filelds in the quantum well, we can show that in order to account for the experimental results we have to assume the partial relaxation of the strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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References

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