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Magnetron Dry Etching for Photonic Device Fabrication

Published online by Cambridge University Press:  22 February 2011

H. E. G. Arnot ,
H. P. Zappe ,
J. E. Epler ,
B. Graf ,
R. Widmer  and
H. W. Lehmann
H. E. G. Arnot
Affiliation:
Paul Scherrer Institute Zürich, Badenerstrasse 569, CH-8048 Zürich, Switzerland
H. P. Zappe
Affiliation:
Paul Scherrer Institute Zürich, Badenerstrasse 569, CH-8048 Zürich, Switzerland
J. E. Epler
Affiliation:
Paul Scherrer Institute Zürich, Badenerstrasse 569, CH-8048 Zürich, Switzerland
B. Graf
Affiliation:
Paul Scherrer Institute Zürich, Badenerstrasse 569, CH-8048 Zürich, Switzerland
R. Widmer
Affiliation:
Paul Scherrer Institute Zürich, Badenerstrasse 569, CH-8048 Zürich, Switzerland
H. W. Lehmann
Affiliation:
Paul Scherrer Institute Zürich, Badenerstrasse 569, CH-8048 Zürich, Switzerland
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Abstract

Magnetron dry etching using SiCl4, combined with a smooth reflowed photoresist masking technique has been used to fabricate GaAs/AlGaAs ridge waveguides. The effect of pressure, flowrate and power on etch rate and sidewall smoothness has been studied. Waveguides fabricated using optimum parameters exhibited optical losses lower than those achievable using wet etching. This process was further used in the fabrication of Fabry Perot ridge lasers, detectors and phase modulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 177
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Sonek, G J, Zhong, L J, Wolf, E D, Ballantyne, J M, J. Lightwave Technol. 3 (15), 1147 (1985).Google Scholar
2 Matsui, T, Sugimoto, H, Ohtsuka, K, Abe, Y, Ogata, H, Elect. Lett. 25, 954 (1989).Google Scholar
3 see for example Cheung, R, Thoms, S, Watt, M, Foad, M A, sotomayor-Torres, C M, Wilkinson, C D, Cox, U J, Cowley, R A, Dunscombe, C, Williams, R H, Semicond. Sci. Technol. 7, 1189 (1992); T Hara, H Suzuki, A Suga, T Terada, N Toyoda, J. Appl. Phys. 62 (10), 4109 (1987).Google Scholar
4 see for example Tong, M, balleger, D G, Ketterson, A, Roan, E J, Cheng, K Y, and Adesida, I, J. Elect. Mat. 21 (1), 9 (1992); R F Cheung, Y H Lee, C M Knoedler, K Y Lee, T P Smith III, D P Kern, Appl. Phys. Lett. 54 (2), 2140, (1989).Google Scholar
5 Seaward, K L, Moll, N J, J. Vac. Sci. Technol. B 10 (1), 46 (1992).Google Scholar
6 Rossnagel, S M in Thin Film Processes II edited by Vossen, J L and Kern, W (Academic Press Limited 1991) Chap. 2 p.43–58.Google Scholar
7 Ono, K, Ooman, T, Tuda, M, Namba, K, J. Vac. Sci. Technol. A 10 (4), 1071 (1992).Google Scholar
8 Singh, J, J. Vac. Sci. Technol. B 9 (4), 1911, 1991.Google Scholar
9 Meyyappan, M, McLane, G F, Cole, M W, Laraeu, R, Namaroff, M, Sasserath, J, and Sundararamamn, C S, J. Vac. Sci. Technol. A 10 (4), 1147, 1992; M Meyyappan, G F McLane, H S Lee, D Eckart, M Namaroff, J Sasserath, J. Vac. Sci. Technol. B 10 (3), 1215, 1992.Google Scholar
10 see for example Lin, I, J. Appl. Phys. 58 (8),2981 (1985); M Kimizuka, Y Watanabe and Y Ozaki, J. Vac. Sci. Technol. B10 (5), 2192 (1992); G Y Yoem and M J Kushner, J. Vac. Sci. Technol. A 10 (4), 1071 (1992).Google Scholar
11 Contolini, R J and D'Asaro, L A, J. Vac. Sci. Technol. B 4 (3), 706, 1986.Google Scholar
12 McLane, G F, Meyyappan, M, Lee, H S, Buckawald, W, J. Vac. Sci. Technol. A 9 (3), 935, 1991;G F McLane, M Meyyappan, M W Cole, C Wrenn, J. Appl. Phys. 69 (2) 695 1991.Google Scholar