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Published online by Cambridge University Press: 28 February 2011
We report low temperature magneto-photoluminescence(PL) investigations of ex-citon spectra of n-doped (AlGa)As-GaAs single heterojunctions. At zero field, the PL spectrum is dominated by the free excitons and excitons bound to the impurities in the bulk GaAs, which overlap a weak emission band associated with the radiative transition between the two dimensional electron gas(2DEG) and the photoexcited holes. In the presence of a magnetic field applied parallel to the growth axis the transitions from the 2DEG, now quantized into Landau levels, become well pronounced. Additionally, intensity oscillations are observed when the 2DEG line crosses the exciton lines, which we believe is due to the effect of a resonant tunneling of the 2DEG from the quantum well region to the bulk GaAs.