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Luminescence from Defects and Impurity Centers in Y2O3

Published online by Cambridge University Press:  28 February 2011

M. S. Jahan ,
D. W. Cooke ,
B. L Bennett ,
W. L Hults ,
M. A. Maez ,
K. C. Ott  and
J. L. Smith
M. S. Jahan
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
D. W. Cooke
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
B. L Bennett
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
W. L Hults
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
M. A. Maez
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
K. C. Ott
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
J. L. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

High-purity (99.999%) Y2O3 powder is used as a starting material for fabricating high-temperature superconductors (HTS), and is frequently found as an unreacted second phase in the final product. We have found that as-received Y2O3 contains Tb3+ paramagnetic impurity ions as determined by TSL and emission-spectra measurements. Deep luminescence traps (presumably Tb4+ ions) are formed in Y2O3 when it is exposed to frays, x rays, or fluorescent lights. These deep traps can only be removed by annealing the material to near 1600°C. Given the short coherence length of HTS it is possible that order-of-magnitude variations in the Tb impurity concentration of starting materials may affect the ultimate value of surface resistance (Rs).

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References

1 Ozawa, L. and Toryu, T., Analyt. Chem. 40, 187 (1968).Google Scholar
2 Cooke, D. W., Jahan, M. S., Smith, J. L., Maez, M. A., Hults, W. L, Raistrick, I. D., Peterson, D. E., O'Rourke, J. A., Richardson, S. A., Doss, J. D., Gray, E. R., Rusnak, B., Lawrence, G. P., and Fortgang, C., Appl. Phys. Lett. 54, 960 (1989).Google Scholar
3 Wood, R. L. and Hayes, W., J. Phys. C: Solid State Phys. 15, 7209 (1982).Google Scholar
4 Shand, W. A., J. Mater. Sci. 3, 344 (1968).Google Scholar
5 De Kalb, E. L, D'Silva, A. P., and Fassel, V. A., Analyt. Chem. 42, 1246 (1970).Google Scholar
6 Kuznetsov, A. I., Abramov, V. M., and Uibo, T. V., Opt. Spectrosc. (USSR) 58, 368 (1985).Google Scholar