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Luminescence characterization of InGaN/GaN vertical heterostructures grown on GaN nanocolumns

Published online by Cambridge University Press:  01 February 2011

Robert Armitage
Robert Armitage*
Affiliation:
armitage@riken.jp, United States
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Abstract

The photoluminescence of MBE-grown InGaN/GaN vertical heterostructures on c-axis oriented GaN nanocolumns is investigated. Nanocolumnar InGaN heterostructures exhibit luminescence efficiencies greater than 20% for peak emission wavelengths as long as 540 nm. Compared to otherwise identical InGaN samples with larger median column diameters, the luminescence is blue-shifted and exhibits reduced efficiency for diameters less than about 50 nm. Growth of InGaN on GaN columns with a broad distribution of diameters results in broad-band photoluminescence that appears white to the eye and has efficiency as high as 23%.

Keywords

nitrideoptical propertiesnanostructure

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL16-04
Copyright
Copyright © Materials Research Society 2009

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References

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