Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-28T23:52:25.836Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Temperature Preparation of Poly-Si Thin-Films Having Giant Grains

Published online by Cambridge University Press:  15 February 2011

Wen-Chang Yeh  and
Masakiyo Matsumura
Wen-Chang Yeh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan, wyeh@silicon.pe.titech.ac.jp, URL: http://silicon.pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan
Get access

Abstract

A low heat-capacitance substrate has been introduced to lateral grain-growth for Si thin-films. Grains as large as 13μm could be fabricated by irradiation of a single shot of an excimer-laser light pulse with intensity gradient. The film has an orientation in the (110) direction, different from (111) for the conventional excimer-laser-annealed film, and is applicable to a seed layer for solid-phase epitaxial-growth aiming at solar cell application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 177
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kumari, S., Arora, N. K. and Jain, G. C.: Solar En. Mat., 5 (1981) 383.Google Scholar
2. Koliwad, K. M. and Daud, T.: 14th IEEE Photovoltaic Specialists Conf., (1980) 1204.Google Scholar
3. Ghosh, A. K., Fishman, C. and Feng, T.: J. Appl. Phys., 51 (1980) 446.Google Scholar
4. Card, H. C. and Yang, E. S.: IEEE Trans. Electron Devices, 24 (1977) 397.Google Scholar
5. Yeh, W.-C. and Matsumura, M.: Jpn. J. Appl. Phys., 38 (1999) L110.Google Scholar
6. Ishikawa, K., Ozawa, M., Oh, C. and Matsumura, M.: Jpn. J. Appl. Phys., 37 (1998) 731.Google Scholar
7. Oh, C. and Matsumura, M.: Jpn. J. Appl. Phys., 37 (1998)5474.Google Scholar
8. Narayan, J. and White, C. W.: Appl. Phys. Lett., 44 (1984) 35.Google Scholar
9. Russell, H. W.: American Ceramic Soc., (1934) 1.Google Scholar
10. Jin, C., Luttmer, J.D., Smith, D.M. and Ramos, T.A.: MRS Bulletin, 22 (1997) 39.Google Scholar
11. Yamamoto, K., Nakashima, A., Suzuki, T. and Yoshimi, M.: Jpn. J. Appl. Phys., 3 (1994) L1751.Google Scholar
12. Kuriyama, H., Nohda, T., Aya, Y., Kuwahara, T., Wakisaka, K., Kiyama, S. and Tsuda, S.: Jpn. J. Appl. Phys., 33 (1994) 5657.Google Scholar
13. Drosd, R. and Washibum, J.: J. Appl. Phys., 53 (1982) 397.Google Scholar