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Low-Temperature Formation of Device-Quality Polysilicon Films by cat-CVD Method

Published online by Cambridge University Press:  15 February 2011

Hideki Matsumura ,
Akira Heya ,
Ritsuko Iizuka ,
Akira Izumi ,
An-Qiang He  and
Nobuo Otsuka
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Akira Heya
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Ritsuko Iizuka
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
An-Qiang He
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Nobuo Otsuka
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
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Abstract

Polycrystalline silicon (poly-Si) films are deposited at temperatures lower than 300–400°C by the cat-CVD method. In the method, a SiH4 and H2 gas-mixture is decomposed by catalytic cracking reactions with a heated tungsten catalyzer placed near substrates. Carrier transport, optical and structural properties are investigated for this cat-CVD poly-Si. The films show both large carrier mobility and large optical absorption for particular deposition conditions. The cat-CVD poly-Si films are found to be one of the useful materials for thin film transistors and thin film solar cells.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 983
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Usui, S., Optoelectronics 4, 235 (1989).Google Scholar
2.Matsumura, H., Ihara, H. and Tachibana, H., Proceedings of the 18th IEEE Photovoltaic Specialists Conference, (1985, Las Vegas) p. 1277.Google Scholar
3.Matsumura, H., Jpn. J. Appl. Phys. 25, L949 (1986).Google Scholar
4.Matsumura, H., Appl. Phys. Lett. 51, 804 (1987)Google Scholar
5.Matsumura, H. and Ihara, H., J. Appl. Phys. 64, 6505 (1988).Google Scholar
6.Matsumura, H., J. Appl. Phys. 65, 4396 (1989).Google Scholar
7.Mahan, A., Carapella, J., Nelson, B. P., Crandall, R. S. and Balberg, I., J. Appl. Phys. 69, 6728 (1991).Google Scholar
8.Matsumura, H., Proceeding of 19th International Conference on the Physics of Semiconductors Vol. 2, (1988, Warsaw) p.1685.Google Scholar
9.Matsumura, H., J. Appl. Phys. 66, 3612 (1989).Google Scholar
10.Matsumura, H., Jpn. J. Appl. Phys. 30, L1522 (1991).Google Scholar
11.Kamins, T., Polycrystalline Silicon for Integrated Circuits Applications (Kluwer Academic Publication, Boston, 1988) Chap.5.Google Scholar