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Low Temperature Selective Growth Of β -SiC Using SiH2 Cl2/C3H8/HCl/H2 Gas System

Published online by Cambridge University Press:  26 February 2011

Y. Ohshita
Y. Ohshita*
Affiliation:
Microelectronics Res. Labs., NEC Corp., Miyazaki 4-1-1, Miyamaeku, Kawasaki 213 Japan
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Abstract

β -SiC is grown on a Si(100) substrate by chemical vapor deposition method under reduced pressure using SiH2 Cl2/C3H8/HCl/H2 gas system. The addition of HCI to SiH2 Cl2/C3H8/HCl/H2 gas system makes it possible to obtain a stoichiometric β -SiC film with a mirror surface at low growth temperature of 900°C. Moreover, β -SiC selective growth on Si(100) surface, with no nucleation on SiO2 surface, is achieved. According to the increase of the HCI flow rate, the density of SiC nucleation on SiO2 surface is greatly decreased. Perfect selective β -SiC film is obtained for HCI concentrations greater than 1.2%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 433
Copyright
Copyright © Materials Research Society 1990

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References

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