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A Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS

Published online by Cambridge University Press:  16 February 2011

S.S. He  and
G. Lucovsky
S.S. He
Affiliation:
Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

The drive-current of low-temperature (∼300°C) deposited TFTs has been increased by replacing the a-Si:H channel, and source and drain materials with μc-Si. Lightly B2H6 doped, near-intrinsic μc-Si has been used as the channel layer of the TFTs, and n+ μc-Si was used for the source and drain contacts. The compensation of intrinsic defects in the undoped μc-Si by boron doping increases the dark conductivity activation energy from -0.35 eV to 0.8 eV. TFTs were fabricated in a bottom gate structure, and required an H2 plasma treatment to produce devices with effective channel mobilities of -6.8 cm2/V-s and threshold voltages of -3.7 V in the saturation region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 25
Copyright
Copyright © Materials Research Society 1994

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References

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