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Low Temperature Photoluminescence and Photoinduced Current Spectroscopy on CdZnTe Grown by High-Pressure Bridgman Technique

Published online by Cambridge University Press:  10 February 2011

A. Zerrai ,
K. Cherkaoui ,
S. Mergui ,
A. Zumbiehl ,
M. Hage-Ali ,
G. Marrakchi  and
G. Brémond
A. Zerrai
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA, 20 Av. A. Einstein, 69621 Villeurbanne Cedex, France.
K. Cherkaoui
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA, 20 Av. A. Einstein, 69621 Villeurbanne Cedex, France.
S. Mergui
Affiliation:
Florida International University, Electrical and Computer Engineering Department, CEAS352, Miami, Florida 33199
A. Zumbiehl
Affiliation:
PHASE-CNRS, BP 20, 23, rue du Loess, F-67037 Strasbourg Cedex, France
M. Hage-Ali
Affiliation:
PHASE-CNRS, BP 20, 23, rue du Loess, F-67037 Strasbourg Cedex, France
G. Marrakchi
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA, 20 Av. A. Einstein, 69621 Villeurbanne Cedex, France.
G. Brémond
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA, 20 Av. A. Einstein, 69621 Villeurbanne Cedex, France.
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Abstract

Low temperature photoluminescence (PL), photoinduced current spectroscopy (PICTS) and thermoelectric effect spectroscopy (TEES) measurements have been carried out on several CdZnTe samples, taken from the same ingot, grown by the High Pressure Bridgman Technique. The PL bandgap edge luminescence allowed us to study the quality of the CdZnTe material. We have also determined the zinc segregation through the ingot. A broad luminescence band at lower energies was observed and correlated with PICTS results. The behavior of the defects through the ingot was studied by PICTS. Finally, these results are used to implement the resistivity model.

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