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Low Temperature Oxidation of Silicon After Copper Ion Implantation

Published online by Cambridge University Press:  21 February 2011

E.J. Jaquez ,
T.L. Alford ,
N.D. Theodore ,
D. Adams ,
Jian Li ,
S.W. Russell  and
Simone Anders
E.J. Jaquez
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
T.L. Alford
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
N.D. Theodore
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
D. Adams
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
Jian Li
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
S.W. Russell
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
Simone Anders
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

Silicon oxide films ( > 1μm ) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiOx interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 189
Copyright
Copyright © Materials Research Society 1998

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References

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