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Low Temperature Interactions Between Gold and Iron in Silicon

Published online by Cambridge University Press:  21 February 2011

S. D. Brotherton ,
P. Bradley  and
A. Gill
S. D. Brotherton
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England.
P. Bradley
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England.
A. Gill
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England.
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Abstract

The annealing kinetics of the gold-iron complex have been studied over the temperature range from room temperature to 400°C. From a consideration of the charge states of the gold and iron centres at room temperature it was concluded that the pairing was by Coulombic attraction. The binding energy of the centre was found to be 1.22 eV.

During the annealing processes the interstitial iron was found to be precipitating and this was shown to modify the details of the growth and dissociation rates of the gold-iron complex.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 31
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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