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Low Temperature in Situ Cleaning of Si(100) Surfaces and Transmission Electron Microscopy of Subsequent Growth of Epitaxial Germanium

Published online by Cambridge University Press:  28 February 2011

R.A. Rudder ,
S.V. Hattangady ,
J.B. Posthill  and
R.J. Markunas
R.A. Rudder
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
S.V. Hattangady
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
J.B. Posthill
Affiliation:
Department of Materials Science and Engineering, North Carolina State Univeisity, Raleigh, NC 27695-7907
R.J. Markunas
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

A low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116: Symposium A – Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices , 1988 , 529
Copyright
Copyright © Materials Research Society 1988

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References

1 Kern, W. and Puotinen, D. A., RCA Rev. 31, 187 (1970).Google Scholar
2 Kern, Werner, “Purifying Si and SiO2 Surfaces with Hydrogen Peroxide.” Semiconductor International, April 1984, pp 94–99.Google Scholar
3 Rudder, R.A., Fountain, G. G., and Markunas, R. J., J. Appl. Phys. 60, 3519 (1986).CrossRefGoogle Scholar
4 Hattangady, S.V., Rudder, R.A., Fountain, G.G., Vitkavage, D.J., and Markunas, R.J., “In situ surface cleaning of Ge(111) and Si(100) for epitaxial growth of Ge at 300°C using remote plasma enhanced chemical vapor deposition,” published in Symposium C of Fall 1987 MRS Meeting, Boston, Mass. CrossRefGoogle Scholar
5 Rudder, R.A., Hattangady, S.V., Vitkavage, D.J., and Markunas, R.J., “Heteroepitaxial nucleation and growth of Ge on Si(100) surfaces using remote plasma enhanced chemical vapor deposition,” published in this proceedings.Google Scholar