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Low Temperature Deposition of Zinc Oxide Films

Published online by Cambridge University Press:  01 February 2011

H. W. Lee ,
Y. G. Wang ,
S. P. Lau  and
B. K. Tay
H. W. Lee
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
Y. G. Wang
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
S. P. Lau
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
B. K. Tay
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
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Abstract

A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.16
Copyright
Copyright © Materials Research Society 2003

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