Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-29T00:11:58.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Contact Resistivity Mn/Au/Ti/Pd/Au P-Ohmic Contacts for HBTs

Published online by Cambridge University Press:  22 February 2011

B. Vetanen ,
C. Haynes ,
S.J. Prasad ,
I. Beers  and
S. Park
B. Vetanen
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
C. Haynes
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
S.J. Prasad
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
I. Beers
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
S. Park
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
Get access

Abstract

Obtaining good p-ohmics to the base layers of AlGaAs/GaAs HBTs have been difficult due to metal spiking and instability of the contacts to subsequent processing temperatures. To avoid spiking, non-alloyed contacts have been traditionally used. In this paper, we present a stable, non-spiking, low contact resistivity alloyed p-ohmic contact to HBT structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 243
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brooks, R.C. et al. ,“Low-Resistance Ohmic Contacts to P-type GaAs Using Zn/Pd/Au Metallization”, IEEE Electron Device Letters, 6(10), pp 525–527, 1985.Google Scholar
2. Hirano, M. and Yanagawa, F., “Low- Resistance Ohmic Contacts to pGaAs”, Jap. J. App. Phys. 25 (8), pp 1268–1269, 1986.Google Scholar
3. Chevaillier, C. D. et al. , “Comprehensive Study of AuMn p-type Ohmic Contact for GaAs/GaAlAs Heterojunction Bipolar Transistors”, J. Appl. Phys., 59(11), pp 3783–3786, 1986 Google Scholar