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Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C

Published online by Cambridge University Press:  01 February 2011

Philip Neudeck ,
David J. Spry ,
Liang-Yu Chen ,
Carl W. Chang ,
Glenn M. Beheim ,
Robert S. Okojie ,
Laura J. Evans ,
Roger D. Meredith ,
Terry L. Ferrier  and
Michael J. Krasowski
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Philip Neudeck
Affiliation:
Neudeck@nasa.gov, NASA Glenn Research Center, Sensors and Electronics Branch, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
David J. Spry
Affiliation:
David.J.Spry@nasa.gov, OAI, NASA Glenn, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Liang-Yu Chen
Affiliation:
liangyu.chen-1@nasa.gov, OAI, NASA Glenn, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Carl W. Chang
Affiliation:
Carl.W.Chang@nasa.gov, ASRC, NASA Glenn, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Glenn M. Beheim
Affiliation:
Glenn.M.Beheim@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Robert S. Okojie
Affiliation:
Robert.S.Okojie@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Laura J. Evans
Affiliation:
Laura.J.Evans@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Roger D. Meredith
Affiliation:
Roger.D.Meredith@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Terry L. Ferrier
Affiliation:
Terry.L.Ferrier@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Michael J. Krasowski
Affiliation:
Michael.J.Krasowski@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Norman F. Prokop
Affiliation:
Norman.F.Prokop@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
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Abstract

NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 °C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 °C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

Keywords

microelectronicssemiconductingelectrical properties

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D11-02
Copyright
Copyright © Materials Research Society 2008

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References

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