Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-28T23:53:03.395Z Has data issue: false hasContentIssue false
  • English
  • Français

Localized Photoprocesses at Semiconductor-Electrolyte Interfaces Using a Programmable Laser Spot Scanner

Published online by Cambridge University Press:  21 February 2011

C. A. Kavassalis ,
D. H. Longendorfer ,
R. A. Lelievre  and
R. D. Rauh
C. A. Kavassalis
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
D. H. Longendorfer
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
R. A. Lelievre
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
R. D. Rauh
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
Get access

Abstract

A highly focused laser can be used to perform spatially selective photoelectrochemistry at semiconductor-electrolyte interfaces. These processes may be used for imaging (etching, deposition, etc.) or for nondestructive mapping of semiconductor properties from photoelectric response. A programmable laser scanner is described which can be used for both. An example of imaging is given for photoelectrochemical etching of pits in CdSe electrodes, which may be applied to archival data storage. Nondestructive evaluation is shown for a CdS crystal, in which the lateral distribution of subband gap photovoltage response is related to surface states incurred by polishing damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 151
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, Butler, M. A., J. Appl. Phys. 48, 1914 (1977);Google Scholar
1a Handley, L. J., McCann, J. F. and Hanemann, D., 53, 4549 (1982);CrossRefGoogle Scholar
1b Etcheberry, A. et al. , 53, 8867 (1982);Google Scholar
1c Kamieniecki, E., J. Vac. Sci. Technol. 20, 811 (1982);CrossRefGoogle Scholar
1d Haak, R., Ogden, C. and Tench, T., J. Electrochem. Soc. 129, 891 (1982);Google Scholar
1e Micheels, R. H. and Rauh, R. D., J. Electrochem. Soc., in press.Google Scholar
2. Gurevich, Y. Y. and Pleskov, Y. V., Semiconductor Semimetals 19, 256 (1983).Google Scholar
3. Perone, S. P., Richardson, J., Deutscher, S. B., Rosenthal, J. and Ziemer, J. N., J. Electrochem. Soc. 127, 2580 (1980).Google Scholar
4. Kamieniecki, E., J. Appl. Phys., in press.Google Scholar
5. Beel, A., Laser Focus/Electro Optics, September, 1983, p. 125.Google Scholar
6. Heller, A., Chang, K. C. and Miller, B., J. Electrochem. Soc. 124, 697 (1977).Google Scholar