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Published online by Cambridge University Press: 25 February 2011
A detailed study of local phonon heating due to multiphonon recombination process is presented. Nonequilibrium distribution of defects by vibration energy is calculated taking into account the dependence of capture and emission rates on the defect energy. It is shown that multiphonon generation and recombination of electron-hole pairs stimulate diffusion of defects in energy space. The results are used to calculate the rate of recombination-enhanced defect annealing.