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Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation

Published online by Cambridge University Press:  22 February 2011

R. T. Tung ,
J. M. Gibson ,
D. C. Jacobson  and
J. M. Poate
J. M. Gibson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 721
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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