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Limitation of Selective Epitaxial Growth Conditions in Gas Source MBE Using Si2H6

Published online by Cambridge University Press:  25 February 2011

Junro Sakai ,
Ken-Ichi Aketagawa  and
Toru Tatsumi
Junro Sakai
Affiliation:
ANELVA Corporation., Thin Film Engineering Dept., 5–8–1, Yotsuya, Fuchu, Tokyo, 183, Japan
Ken-Ichi Aketagawa
Affiliation:
ANELVA Corporation., Thin Film Engineering Dept., 5–8–1, Yotsuya, Fuchu, Tokyo, 183, Japan
Toru Tatsumi
Affiliation:
NEC Corporation., Microelectronics Labs., 4–1–1, Miyazaki, Miyamaeku, Kawasaki, 213, Japan
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Abstract

Low temperature and high growth rate selective epitaxial growth (SEG) on Si02 patterned Si (001) substrate in gas-source molecular-beam epitaxy (GS-MBE) using pure Si2H6 has been investigated by RHEED observation. In the temperature range of 550 to 850°C, SEG was completely obtained at an initial growth stage. Limiting conditions of SEG were closely related with critical volume of supply gas that was equal to the total amount molecules supplied on SiO2 surface during the incubation period of initial growth. The surface SiO2 was induced to evaporate with Si2H6 supplied above 800°C, so that thermal cleaning temperature for removing native oxide came down to 800°C. As a result, the maximum process temperature of Si SEG now became 800°C, and its growth rate reached as high as 645A/min at growth temperature of 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 271
Copyright
Copyright © Materials Research Society 1991

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References

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