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Light-Soaking of a-Si:H,F Films Deposited from SiF4 and H2

Published online by Cambridge University Press:  25 February 2011

H. R. Park ,
J. Z. Liu ,
A. Maruyama  and
S. Wagner
H. R. Park
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
A. Maruyama
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We light-soaked two a-Si:H, F films up to 1,300 hours at a generation rate of 5×1020 cm−3s− 1. The films differ in fluorine content (1 vs. 5 at.%) and in hydrogen content (8 vs. 15 at.%). At each step, we measured the subgap absorption with the constant photocurrent method, the dark- and the photoconductivity. The magnitude and rate of light-induced defect production is similar to that of a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 613
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Madan, A., Ovshinsky, S.R. and Benn, E., Phil. Mag. B 40, 259 (1979)CrossRefGoogle Scholar
[2] Matsumura, H., Sakai, K., Furukawa, Y., J. Appl. Phys. 52(9), 5537 (1981)Google Scholar
[3] Janai, M., Weil, R. and Pratt, B., Phys. Rev. B 31(8), 5311 (1985)Google Scholar
[4] Usui, S., Sawada, A. and Kikuchi, M., J. Non-Cryst. Solids 41, 151 (1980)Google Scholar
[5] Matsumura, H. and Furukawa, S., J. Non-Cryst. Solids 52–60, 739 (1983)CrossRefGoogle Scholar
[6] Shibata, N., Fukada, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I., Mat. Res. Soc Symp. Proc. 95, 225 (1987)Google Scholar
[7] Ganguly, C., De, S.C., Ray, S. and Barua, A.K., Solar Energy Materials, 17, 237 (1988)CrossRefGoogle Scholar
[8] Janai, M. and Stutzmann, M., Solar Cells 14, 191 (1985)Google Scholar
[9] Uesugi, T., Ihara, H. and Matsumura, H., Jpn. J. Appl. Phys. 24, 909 (1985)Google Scholar
[10] Slobodin, D., Aljishi, S., Schwarz, R. and Wagner, S., Mat. Res. Soc. Symp. Proc. 48, 153 (1985)Google Scholar
[11] Maruyama, A., Shen, D.S., Chu, V., Liu, J.Z. and Wagner, S., to be published in Mat. Res. Soc. Symp. Proc., 131, edited by Gross, M.E., Yates, J.T. Jr., Jasinski, J., Fall (1988) Boston Google Scholar
[12] Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S. and Chu, T.L., Appl. Phys. Lett. 50 (21), 1521 (1987)CrossRefGoogle Scholar
[13] See, for example, AlP Conference Proceedings 157 on Stability of Amorphous Silicon Alloy and Devices, Palo Alto, CA, 1987, edited by Stafford, B.L. and Sabisky, E. (American Institute of Physics, New York, 1987)Google Scholar
[14] Shepard, K., Smith, Z E., Aljishi, S. and Wagner, S., Appl. Phys. Lett. 53 (17), 1644 (1988)Google Scholar
[15] Tanielian, M.H., Goodmann, N.B. and Fritzsche, H., J. de Physique Colloque C4, Supplement, 375. (1981)Google Scholar
[16] Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B (32) 23 (1985)Google Scholar
[17] Redfield, D. and Bube, R., Appl. Phys. Lett. 54 (11), 1037 (1989)CrossRefGoogle Scholar