Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-02-09T21:22:22.176Z Has data issue: false hasContentIssue false
  • English
  • Français

Leakage Currents in P-Channel Accumulation Mode Tft's

Published online by Cambridge University Press:  28 February 2011

B.A. Khan ,
T. Marshall ,
E. Arnold  and
R. Pandya
B.A. Khan
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
T. Marshall
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
E. Arnold
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
R. Pandya
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
Get access

Abstract

We have fabricated accumulation mode MOSFETS in poly-silicon thin films and studied the effect of passivation of the leakage currents in these devices. We have used C-V measurements ot determine the effective doping concentration and depletion layer widths in the passivated and unpassivated devices. We find that passivation reduces the effective doping concentration and therefore increases the depletion layer width. Although this change in effective doping concentration is small (less thean a factor of 2), the increase in depletion layer width is sufficient to pinch off the passivated device but not the unpassivated one. This leads to the dramatic reduction in leakage currents after passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 435
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Fossum, J. G. and Ortiz-Conde, A., MRS Proceedings, Vol.33 (1984)Google Scholar
2.Seager, C. H. and Ginley, D. S., Appl. Phys. Lett. 34(5), 1 Mar 1979Google Scholar
3.Kamins, T. I. and , Marcoux, IEEE Elect. Dev. Lett. EDL–1, No.8 Aug. 1980.Google Scholar
4.Malhi, S. D. S. et. al., Electronics Letters 10 Nov. 1982Google Scholar
5.Shichijo, H. et. al., MRS Proceedings, Vol.33 (1984)Google Scholar
6.Hasegawa, S. et. al., J. Appl. Phys. 53(7), July 1982Google Scholar
7.Lu, N. Chau-Chun et. al., IEEE Tr. El. Dev. VoL ED–28, No.7 July 1981Google Scholar
8.Kim, D. M. et. al., IEEE Tr. El. Dev. Vol.ED–31, No.4 April 1984Google Scholar
9.Khondker, A. N. et. al., IEEE Tr. El. Dev. Vol.ED–31, No.4 April 1984Google Scholar
10.Madan, S. K. and Antoniadis, D. A., Device Research Conference, Boulder, Colorodo, 1985Google Scholar