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Lattice Sites and Damage Annealing of Implanted Tm and Er IN Si

Published online by Cambridge University Press:  15 February 2011

U. Wahl ,
J. G. Correia ,
J. De Wachter ,
G. Langouche ,
J. G. Marques ,
R. Moons ,
A. Vantomme  and
ISOLDE collaboration
U. Wahl
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, email: ulrich.wahl@fys.kuleuven.ac.be
J. G. Correia
Affiliation:
CERN-PPE, CH-1211 Genève 23, Switzerland
J. De Wachter
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, email: ulrich.wahl@fys.kuleuven.ac.be
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, email: ulrich.wahl@fys.kuleuven.ac.be
J. G. Marques
Affiliation:
CFNUL, Av. Prof. Gama Pinto 2, P-1699 Lisboa Codex, Portugal
R. Moons
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, email: ulrich.wahl@fys.kuleuven.ac.be
A. Vantomme
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, email: ulrich.wahl@fys.kuleuven.ac.be
ISOLDE collaboration
Affiliation:
CERN-PPE, CH-1211 Genève 23, Switzerland
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Abstract

We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope 167mEr (2.27 s) which is the decay product of radioactive Tm 167m(9.25 d). Following 60 keV implantation of 167Tm at a dose of 4×1013 cm−2 and annealing at 600°C, more than 90% of 167mEr is found close to tetrahedral insterstitial(T) sites. The tetra-hedral fraction of 167mEr decreases considerably after 10min annealing at 800°C and above. We attribute this to the onset of diffusion of the parent 167Tm and its trapping at other defects, presumably oxygen atoms or clusters of Tm/Er.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 407
Copyright
Copyright © Materials Research Society 1997

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References

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